Phone:   +49 (0) 5971 - 4010179

E-mail:    sales@surfacenet.de

Feedback

 

Stock List Crystals & Substrates

Stock List Targets

SurfaceNet GmbH Germany (Crystals, Substrates, Service)
   product groups & services       photo gallery       site view       contact       impressum & AGB       Sitemap  

Gallium Arsenide, Semi-Conducting ( HB/VB )

 

Growth method

Horizontal Brigman and Vertical Bridgman

Conductivity

N or P type

Orientation

(100), and off oriented .5 degree
Other orientations and tolerance
to .1 degree available on request

Gallium Arsenide, Semi-Conducting HB/VB, SurfaceNet GmbH Germany

Wafer Diameter

2.000 0.015
3.000 0.025 inches
Other diameters available on request

Wafer Thickness

400 25
500 25 microns
Other thicknesses to 250 microns available on request

Rectangular
Wafer Sizes

25 mm x 45 mm (+0, - 1 mm)
38 mm x 45 mm (+0, - 1 mm)
45 mm x 45 mm (+0, - 1 mm)
52 mm x 57 mm (+0.6, - 0.4 mm)
All rectangular wafers sized with (110) cleavage plane parallel to wafer sides.

Surface

As Cut*
Polished one side etched back side
Polished both sides

Etch Pit
Density Ranges

2,000
5,000
10,000
> 10,000 cm-

Carrier Concentration

N = 5 x 1016 4 x 1018 cm-
P = 6 x 1017 3 x 1019 cm-

Mobility

N = 1,200 2.400 cm / v-sec
P = 40 100 cm / v-sec

Resistivity

N = 1.1 15.0 x 10- ohm-cm
P = 0.8 12.0 x 10- ohm-cm

 Up