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Stock List Crystals & Substrates

Stock List Targets

SurfaceNet GmbH Germany (Crystals, Substrates, Service)
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Gallium Arsenide, Semi-Insulating ( VB )Gallium Arsenide, Semi-Conducting VB, SurfaceNet GmbH Germany

 

Growth method

Vertical Bridgman

Dopant

Undoped

Orientation

(100); and off oriented

Wafer Diameter

2.000 ± 0.015

3.000 ± 0.025 inches

Wafer Thickness

500 ± 25

625 ± 25 microns

Surface

Polished both sides

Surface Flatness

£ 2 microns/Inch of Diameter

Etch Pit Density

< 10,000 / cm²
< 5,000 / cm²

Mobility

³ 4,000 cm² / v-sec.

Resistivity

³ 1 x 107 ohm – cm, after thermal anneal